FCH043N60 mosfet equivalent, n-channel mosfet.
* Typ. RDS(on) = 37 mW
* 600 V @ TJ = 150°C
* Ultra Low Gate Charge (Typ. Qg = 163 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 730 pF)
*.
* Telecom / Sever Power Supplies
* Industrial Power Supplies
www.onsemi.com
VDS 600 V
RDS(ON) MAX 43 mW @ 10 .
SUPERFET II MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 414.06KB)